Datasheet > SLF50R240SJ

SLF50R240SJ

更新时间： 2024-11-19 18:09:15

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	882K
描述
TO-220F

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SLF50R240SJ 数据手册

SLF50R240SJ,SLP50R240SJ

500V N-Channel MOSFET

Features

-18A, 500V, RDS(on) typ.= 0.21Ω@VGS = 10 V

General Description

Features

This Power MOSFET is produced using Maplesemi‘s

Advanced Super-Junction technology.

- Low gate charge ( typical 43nC)

- High ruggedness

- 7.6A, 500V, R_{DS(on) typ.}= 0.5Ω@V_GS= 10 V

This advanced technology has_-b_Loe_we_gn_ate_es_chp_ae_rgc_ei₍a_tl_yl_py_ict_aa_li₂lo_5nr_Ce₎d

- High ruggedness

- Fast switching

to minimize conduction loss, provide superior switching

- Fast switching

performance, and withstand high energy pulse in the

- 100% avalanche tested

- Improved dv/dt capability

avalanche and commutation mode.

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

TO-220

TO-220F

G D S

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol

VDSS

Parameter

TO-220F

Units

TO-220

Drain-Source Voltage

Drain Current

500

- Continuous (TC = 25℃)

18*

10*

50*

- Continuous (TC = 100℃)

IDM

VGSS

EAS

IAR

Drain Current - Pulsed

Gate-Source Voltage

(Note 1)

±30

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

EAR

dv/dt

Repetitive Avalanche Energ

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25℃)

4.5

V/ns

156

- Derate above 25℃

Operating and Storage Temperature Range

1.67

0.46

W/℃

℃

TJ, TSTG

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Value

Symbol

Parameter

Units

TO220

0.6

TO220F

RθJC

RθJS

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.6

℃/W

0.5

Maple Semiconductor CO.,LTD

http://www.maplesemi.com

Rev 1.0 September 2015

Page1

12 3 4 5 6 7...9

中文翻译

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