Datasheet > SLF5N65C

SLF5N65C

更新时间： 2024-11-19 18:10:07

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
7页	359K
描述
TO-220F

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SLF5N65C 数据手册

SLP5N65C / SLF5N65C

650V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 4.5A, 650V, R_DS(on)typ.= 2.6Ω@V_GS= 10 V

- Low gate charge ( typical 16nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP5N65C

SLF5N65C

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

4.5

2.6

4.5 *

2.6 *

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

18 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

100

4.5

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

16.4

4.5

V/ns

dv/dt

164

P_D

- Derate above 25℃

1.31

0.30

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

SLP5N65C

0.76

SLF5N65C

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.26

R_θJC

0.5

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 01 January 2017

12 3 4 5 6 7

中文翻译

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