Datasheet > SLF5N65S

SLF5N65S

更新时间： 2024-11-19 18:09:55

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美浦森 - Maplesemi		/
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6页	637K
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SLF5N65S 数据手册

SLP5N65S/SLF5N65S

650V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 4.5A, 650V, R_DS(on)Max= 2.5Ω@V_GS= 10 V

- Low gate charge ( typical 13nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP5N65S

SLF5N65S

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

4.5

2.4

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

±30

113

4.5

3.5

5.5

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

P_D

Power Dissipation (T_C= 25℃)

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

106

T_J, T_STG

-55 to +150

300

℃

T_L

℃

1/8" from case for 5 seconds

Thermal Characteristics

Max.

Symbol

Parameter

Units

SLP5N65S

SLF5N65S

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.20

0.5

3.47

℃/W

R_θJC

R_θJS

R_θJA

62.5

MAPLE SEMICONDUCTOR CO., LTD

http://www.maplesemi.com

Rev1.0 April. 2019

12 3 4 5 6

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