Datasheet > SLF5N60S

SLF5N60S

更新时间： 2024-10-01 18:09:31

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	542K
描述
TO-220F

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中文翻译

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SLF5N60S 数据手册

SLP5N60S / SLF5N60S

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 4.5A, 600V, R_DS(on)Typ= 1.8Ω@V_GS= 10 V

- Low gate charge ( typical 13.3nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- Improved dv/dt capability

TO-220

TO-220F

G D

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

SLP5N60S

Symbol

Parameter

SLF5N60S

Units

Drain-Source Voltage

600

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

4.5

2.5

I_D

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

Gate-Source Voltage

±30

128

4.5

3.5

5.5

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

P_D

Power Dissipation (T_C= 25℃)

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

104

T_J, T_STG

-55 to +150

300

℃

T_L

℃

1/8" from case for 5 seconds

Thermal Characteristics

Max

Symbol

Parameter

Units

SLP5N60S

SLF5N60S

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.2

3.47

℃/W

R_θJC

R_θJS

R_θJA

0.5

62.5

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 01 April. 2018

12 3 4 5 6

中文翻译

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