Datasheet > SLF18N50C

SLF18N50C

更新时间： 2024-10-01 18:09:35

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1006K
描述
TO-220F

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中文翻译

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数据手册

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SLF18N50C 数据手册

SLF18N50C

500V N-channel MOSFET

Features

General Description

- 18A, 500V, R_DS(on)typ= 212mΩ@V_GS= 10 V

- Low gate charge ( typical 87nC)

- Low Crss ( typical 32pF)

- Fast switching

- 100% avalanche tested

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLF18N50C

Units

Drain-Source Voltage

500

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

11.7

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

689

V/ns

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

(Note 3)

dv/dt

4..5

P_D

- Derate above 25℃

0.33

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

SLF18N50C

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.04

R_θJC

R_θJS

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 May. 2022

12 3 4 5 6 7 8

中文翻译

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