Datasheet > SLF20N50S

SLF20N50S

更新时间： 2024-11-19 18:09:19

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	943K
描述
TO-220F

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中文翻译

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SLF20N50S 数据手册

SLP20N50S / SLF20N50S

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 20A, 500V, R_DS(on)= 185mΩ@V_GS= 10 V

- Low gate charge ( typical 40nC)

- Low Crss ( typical 7.7pF)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP20N50S / SLF20N50S

Units

Drain-Source Voltage

500

20 *

13*

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

80 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

957

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

101

V/ns

dv/dt

37.0

0.27

P_D

- Derate above 25℃

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLP20N50S / SLF20N50S

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

3.69

R_θJS

44.2

R_θJA

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 1.1 Apr . 2020

12 3 4 5 6

中文翻译

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