Datasheet > SLF20N50C

SLF20N50C

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1134K
描述
TO-220F

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SLF20N50C 数据手册

SLF20N50C

500V N-channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 20A, 500V, R_DS(on)typ= 200mΩ@V_GS= 10 V

- Low gate charge ( typical 90nC)

- LowCrss ( typical 33pF)

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLF20N50C

Units

Drain-Source Voltage

500

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

11.7

(Note 1)

I_DM

Drain Current

- Pulsed

V_GSS

EAS

Gate-Source Voltage

(Note 2)

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

680

P_D

- Derate above 25℃

0.34

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLF20N50C

2.94

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Oct. 2022

12 3 4 5 6 7 8

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