Datasheet > SLD_F8N65SV

SLD_F8N65SV

更新时间： 2024-11-12 18:09:15

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1203K
描述
TO-252&TO-220F

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SLD_F8N65SV 数据手册

SLD8N65SV / SLF8N65SV

680V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

- 7.5A, 650V, R_DS(on)Max=1.35Ω@V_GS= 10 V

- Low gate charge ( typical 26nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

D-PAK

TO-220F

Absolute Maximum Ratings T_C= 25℃ unless otherwise noted

Symbol

Parameter

SLD8N65SV

SLF8N65SV

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

7.5

I_D

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

Gate-Source Voltage

±30

602

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

141

2.3

V/ns

dv/dt

P_D

- Derate above 25℃

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

Thermal Characteristics

Max

Symbol

Parameter

Units

SLD8N65SV

SLF8N65SV

3.57

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

℃/W

R_θJC

R_θJA

110

62.5

Msemitek Co., Ltd

http://www.msemitek.com

Rev.1.1 Nov. 2020

12 3 4 5 6 7...9

中文翻译

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