Datasheet > SLD_U65R1K2E7

SLD_U65R1K2E7

更新时间： 2024-09-22 18:09:15

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	2305K
描述
TO-252&TO-251

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SLD_U65R1K2E7 数据手册

SLD65R1K2E7 / SLU65R1K2E7

650V N-Channel

Super-JMOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Superjunction MOSFET technology.

- 5A, 650V, R_DS(on)max= 1.2Ω@V_GS= 10 V

- Low gate charge ( typical 9nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies.

I-PAK

D-PAK

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD65R1K2E7 / SLU65R1K2E7

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

2.5

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

Gate-Source Voltage

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

51.2

3.5

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

V/ns

(Note 3)

dv/dt

P_D

Power Dissipation (T_C= 25℃)

116

W/℃

℃

- Derate above 25℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLD65R1K2E7 / SLU65R1K2E7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.071

0.75

R_θJS

60.44

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Oct. 2021

12 3 4 5 6 7...9

中文翻译

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