Preliminary
RoHS Compliant
& Green Package
Pb
SLD-1026Z
3 Watt Discrete LDMOS Device
Plastic Surface Mount Package
Product Description
Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance
LDMOS transistor designed for operation from 10 to 2700MHz. It is an
excellent solution for applications requiring high linearity and efficiency
at a low cost. The SLD-1026Z is typically used in the design of driver
stages for power amplifiers, repeaters, and RFID applications.The
power transistor is fabricated using Sirenza’s latest, high performance
LDMOS II process. This product features a RoHS/WEEE Compliant
package with matte tin finish, designated by the ‘Z’ suffix.
Proprietary SOF-26 Package
Functional Schematic Diagram
Product Features
• 3 Watt Output P1dB
ESD
Protection
• Single Polarity Supply Voltage
• High Gain: 19 dB at 915 MHz
• High Efficiency: 44% at 3W CW
• XeMOS II LDMOS
• Proprietary Low Thermal Resistance Package
• Integrated ESD Protection, Class 1B
Applications
• Base Station PA driver
• Repeaters
• RFID
Backside Paddle = Ground
• Military Communication
• GSM / EDGE / CDMA / WCDMA
RF Specifications
Symbol
Frequency
Gain
Parameter
Unit
MHz
dB
Min
Typ
-
Max
Frequency of Operation
10
2700
3 Watt CW, 902-928 MHz
19
Gain
3 Watt CW, 2110-2170 MHz
dB
14
Efficiency
Efficiency
IRL
Drain Efficiency at 3 Watt CW , 915MHz
Drain Efficiency at 3 Watt CW , 2140MHz
Input Return Loss, 3 Watt Output Power, 915MHz
Input Return Loss, 3 Watt Output Power, 2140 MHz
%
44
%
43
dB
-12
-12
-28
-28
3.5
3.0
IRL
dB
3
3
rd Order IMD at 3 Watt PEP (Two Tone), 915MHz
rd Order IMD at 3 Watt PEP (Two Tone), 2140MHz
dBc
dBc
Watt
Watt
Linearity
1dB Compression (P1dB), 915 MHz
1dB Compression (P1dB), 2140 MHz
ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
dBc
-48
2 carrier WCDMA
performance
IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
dBc
-47
17
RTH
ºC/W
Thermal Resistance (Junction-to-Case)
Test Conditions
VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104157 Rev F