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SLD-1026Z PDF预览

SLD-1026Z

更新时间: 2024-11-17 03:31:43
品牌 Logo 应用领域
SIRENZA /
页数 文件大小 规格书
21页 823K
描述
3 Watt Discrete LDMOS Device Plastic Surface Mount Package

SLD-1026Z 数据手册

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Preliminary  
RoHS Compliant  
& Green Package  
Pb  
SLD-1026Z  
3 Watt Discrete LDMOS Device  
Plastic Surface Mount Package  
Product Description  
Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance  
LDMOS transistor designed for operation from 10 to 2700MHz. It is an  
excellent solution for applications requiring high linearity and efficiency  
at a low cost. The SLD-1026Z is typically used in the design of driver  
stages for power amplifiers, repeaters, and RFID applications.The  
power transistor is fabricated using Sirenza’s latest, high performance  
LDMOS II process. This product features a RoHS/WEEE Compliant  
package with matte tin finish, designated by the ‘Z’ suffix.  
Proprietary SOF-26 Package  
Functional Schematic Diagram  
Product Features  
3 Watt Output P1dB  
ESD  
Protection  
Single Polarity Supply Voltage  
High Gain: 19 dB at 915 MHz  
High Efficiency: 44% at 3W CW  
XeMOS II LDMOS  
Proprietary Low Thermal Resistance Package  
Integrated ESD Protection, Class 1B  
Applications  
Base Station PA driver  
Repeaters  
RFID  
Backside Paddle = Ground  
Military Communication  
GSM / EDGE / CDMA / WCDMA  
RF Specifications  
Symbol  
Frequency  
Gain  
Parameter  
Unit  
MHz  
dB  
Min  
Typ  
-
Max  
Frequency of Operation  
10  
2700  
3 Watt CW, 902-928 MHz  
19  
Gain  
3 Watt CW, 2110-2170 MHz  
dB  
14  
Efficiency  
Efficiency  
IRL  
Drain Efficiency at 3 Watt CW , 915MHz  
Drain Efficiency at 3 Watt CW , 2140MHz  
Input Return Loss, 3 Watt Output Power, 915MHz  
Input Return Loss, 3 Watt Output Power, 2140 MHz  
%
44  
%
43  
dB  
-12  
-12  
-28  
-28  
3.5  
3.0  
IRL  
dB  
3
3
rd Order IMD at 3 Watt PEP (Two Tone), 915MHz  
rd Order IMD at 3 Watt PEP (Two Tone), 2140MHz  
dBc  
dBc  
Watt  
Watt  
Linearity  
1dB Compression (P1dB), 915 MHz  
1dB Compression (P1dB), 2140 MHz  
ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,  
3GPP2, Test model 1, 64 DPCH, 67% Clipping,  
PAR= 9.3 @ 0.01% CCDF  
dBc  
-48  
2 carrier WCDMA  
performance  
IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,  
3GPP2, Test model 1, 64 DPCH, 67% Clipping,  
PAR= 9.3 @ 0.01% CCDF  
dBc  
-47  
17  
RTH  
ºC/W  
Thermal Resistance (Junction-to-Case)  
Test Conditions  
VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such  
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices  
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.  
303 S. Technology Court,  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104157 Rev F  

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