Datasheet > SLD-1026Z

SLD-1026Z

更新时间： 2024-09-21 03:31:43

品牌	Logo	应用领域
SIRENZA		/
页数	文件大小	规格书
21页	823K
描述
3 Watt Discrete LDMOS Device Plastic Surface Mount Package

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SLD-1026Z 数据手册

Preliminary

RoHS Compliant

& Green Package

SLD-1026Z

3 Watt Discrete LDMOS Device

Plastic Surface Mount Package

Product Description

Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance

LDMOS transistor designed for operation from 10 to 2700MHz. It is an

excellent solution for applications requiring high linearity and efficiency

at a low cost. The SLD-1026Z is typically used in the design of driver

stages for power amplifiers, repeaters, and RFID applications.The

power transistor is fabricated using Sirenza’s latest, high performance

LDMOS II process. This product features a RoHS/WEEE Compliant

package with matte tin finish, designated by the ‘Z’ suffix.

Proprietary SOF-26 Package

Functional Schematic Diagram

Product Features

• 3 Watt Output P_1dB

ESD

Protection

• Single Polarity Supply Voltage

• High Gain: 19 dB at 915 MHz

• High Efficiency: 44% at 3W CW

• XeMOS II LDMOS

• Proprietary Low Thermal Resistance Package

• Integrated ESD Protection, Class 1B

Applications

• Base Station PA driver

• Repeaters

• RFID

Backside Paddle = Ground

• Military Communication

• GSM / EDGE / CDMA / WCDMA

RF Specifications

Symbol

Frequency

Gain

Parameter

Unit

MHz

Min

Typ

Max

Frequency of Operation

2700

3 Watt CW, 902-928 MHz

Gain

3 Watt CW, 2110-2170 MHz

Efficiency

IRL

Drain Efficiency at 3 Watt CW , 915MHz

Drain Efficiency at 3 Watt CW , 2140MHz

Input Return Loss, 3 Watt Output Power, 915MHz

Input Return Loss, 3 Watt Output Power, 2140 MHz

-12

-28

3.5

3.0

IRL

^rdOrder IMD at 3 Watt PEP (Two Tone), 915MHz

^rdOrder IMD at 3 Watt PEP (Two Tone), 2140MHz

dBc

Watt

Linearity

1dB Compression (P_1dB), 915 MHz

1dB Compression (P_1dB), 2140 MHz

ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,

3GPP2, Test model 1, 64 DPCH, 67% Clipping,

PAR= 9.3 @ 0.01% CCDF

dBc

-48

2 carrier WCDMA

performance

IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,

3GPP2, Test model 1, 64 DPCH, 67% Clipping,

PAR= 9.3 @ 0.01% CCDF

dBc

-47

R_TH

ºC/W

Thermal Resistance (Junction-to-Case)

Test Conditions

V_DS= 28.0V, I_DQ= 50mA, T_Flange= 25ºC

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such

information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices

303 S. Technology Court,

Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-104157 Rev F

12 3 4 5 6 7...21

中文翻译

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