RoHS Compliant
& Green Package
Pb
SLD-1083CZ
4 Watt Discrete LDMOS FET in
Ceramic Package
Product Description
Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high perfor-
mance LDMOS transistor designed for operation from to 2700MHz. It is
an excellent solution for applications requiring high linearity and effi-
ciency at a low cost. The SLD-1083CZ is typically used in the design of
driver stages for power amplifiers, repeaters, and RFID applica-
tions.The power transistor is fabricated using Sirenza’s latest, high per-
formance LDMOS II process.
Functional Schematic Diagram
Product Features
• 4 Watt Output P1dB
ESD
Protection
• Single Polarity Supply Voltage
• High Gain: 18 dB at 915 MHz
• High Efficiency: 43% at 3W CW
• XeMOS II LDMOS
• Integrated ESD Protection, Class 1B
Applications
• Base Station PA driver
• Repeaters
• RFID
• Military Communication
Case Flange = Ground
• GSM/CDMA
RF Specifications
Symbol
Frequency
Gain
Parameter
Frequency of Operation
3 Watt CW, 902-928MHz
Unit
MHz
dB
Min
-
Typ
-
Max
2700
18
40
-9.5
-
19
43
-12
-30
4
-
-
-
Efficiency
IRL
Drain Efficiency at 3 Watt CW, 915MHz
Input Return Loss, 3 Watt Output Power, 915MHz
3
%
dB
dBc
Watt
rd Order IMD at 3 Watt PEP (Two Tone), 915MHz
-26
-
1dB Compression (P1dB), 915MHz
-
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
Linearity
dBm
-
-
21
-
-
ACPR=-55dB
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-45dB
Thermal Resistance (Junction-to-Case)
dBm
29
11
RTH
ºC/W
Test Conditions
VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC
DC Specifications
Symbol
gm
Parameter
Forward Transconductance @ 30mA IDS
IDS=3mA, VDS=28V
IDS=50mA, VDS=28V
Unit
mA / V
Volts
Volts
Volts
pF
Min
Typical
150
4.2
4
Max
VGS Threshold
VGS Quiescent
VDS Breakdown
Ciss
3
5
1mA VDS current
65
Input Capacitance (Gate to Source) VGS=0V VDS=28V
Reverse Capacitance (Gate to Drain) VGS=0V VDS=28V
Output Capacitance (Drain to Source) VGS=0V VDS=28V
Drain to Source Resistance, VGS=10V VDS=250mV
5.2
0.2
3.2
3.0
Crss
Coss
RDSon
pF
pF
Ω
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
3do0e3s nSot.aTutehocrhizneoorlowgaryraCntoanuyrtS,irenza Microdevices product for use in life-support devices and/or syPstehmosn. eC:op(y8ri0gh0t)20S0M5 SI-irMenMzaIMCicrodevices, Inc. All worldwide rights reserved.
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