Datasheet > SLD-1083CZ

SLD-1083CZ

更新时间： 2024-09-21 03:31:43

品牌	Logo	应用领域
SIRENZA		晶体晶体管光电二极管
页数	文件大小	规格书
5页	221K
描述
4 Watt Discrete LDMOS FET in Ceramic Package

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SLD-1083CZ 数据手册

RoHS Compliant

& Green Package

SLD-1083CZ

4 Watt Discrete LDMOS FET in

Ceramic Package

Product Description

Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high perfor-

mance LDMOS transistor designed for operation from to 2700MHz. It is

an excellent solution for applications requiring high linearity and effi-

ciency at a low cost. The SLD-1083CZ is typically used in the design of

driver stages for power amplifiers, repeaters, and RFID applica-

tions.The power transistor is fabricated using Sirenza’s latest, high per-

formance LDMOS II process.

Functional Schematic Diagram

Product Features

• 4 Watt Output P_1dB

ESD

Protection

• Single Polarity Supply Voltage

• High Gain: 18 dB at 915 MHz

• High Efficiency: 43% at 3W CW

• XeMOS II LDMOS

• Integrated ESD Protection, Class 1B

Applications

• Base Station PA driver

• Repeaters

• RFID

• Military Communication

Case Flange = Ground

• GSM/CDMA

RF Specifications

Symbol

Frequency

Gain

Parameter

Frequency of Operation

3 Watt CW, 902-928MHz

Unit

MHz

Min

Typ

Max

2700

-9.5

-12

-30

Efficiency

IRL

Drain Efficiency at 3 Watt CW, 915MHz

Input Return Loss, 3 Watt Output Power, 915MHz

dBc

Watt

^rdOrder IMD at 3 Watt PEP (Two Tone), 915MHz

-26

1dB Compression (P_1dB), 915MHz

IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,

Linearity

dBm

ACPR=-55dB

IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,

ACPR=-45dB

Thermal Resistance (Junction-to-Case)

dBm

R_TH

ºC/W

Test Conditions

V_DS= 28.0V, I_DQ= 50mA, T_Flange= 25ºC

DC Specifications

Symbol

g_m

Parameter

Forward Transconductance @ 30mA I_DS

I_DS=3mA, V_DS=28V

I_DS=50mA, V_DS=28V

Unit

mA / V

Volts

Min

Typical

150

4.2

Max

V_GSThreshold

V_GSQuiescent

V_DSBreakdown

C_iss

1mA V_DScurrent

Input Capacitance (Gate to Source) V_GS=0V V_DS=28V

Reverse Capacitance (Gate to Drain) V_GS=0V V_DS=28V

Output Capacitance (Drain to Source) V_GS=0V V_DS=28V

Drain to Source Resistance, V_GS=10V V_DS=250mV

5.2

0.2

3.2

3.0

C_rss

C_oss

R_DSon

Ω

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such

information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices

3^do0^e3^{s n}S^ot.^aT^ute^hoc^rh^izn^eo^orlo^wg^ary^raC^nto^anu^yrt^S,^{irenza Microdevices product for use in life-support devices and/or sy}P^steh^mo^sn^.e^C:^op(^y8^ri0^gh0^t)²⁰S⁰M^{5 S}I-^irM^enM^zaI^MC^{icrodevices, Inc. All worldwide rights reserved.}

http://www.sirenza.com

EDS-104013 Rev F

Broomfield, CO 80021

12 3 4 5

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与SLD-1083CZ相关器件

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SLD10A	MCC	获取价格	Tape&Reel : 500Pcs/Reel; Bulk: 200Pcs/Box; Ammo Packing: 450Pcs/AmmoBox;
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SLD10R-1	AMPHENOL	获取价格	Card Edge Connector, 10 Contact(s), 1 Row(s), Female, Right Angle, Solder Terminal
SLD10R-1LF	AMPHENOL	获取价格	Card Edge Connector, 10 Contact(s), 1 Row(s), Male, Right Angle, Solder Terminal, LEAD FRE
SLD10R-2	AMPHENOL	获取价格	Card Edge Connector, 10 Contact(s), 1 Row(s), Female, Right Angle, Solder Terminal
SLD10R-2LF	AMPHENOL	获取价格	Card Edge Connector, 10 Contact(s), 1 Row(s), Male, Right Angle, Solder Terminal, LEAD FRE
SLD10S-2	AMPHENOL	获取价格	Card Edge Connector, 10 Contact(s), 1 Row(s), Female, Straight, Solder Terminal
SLD10S-2LF	AMPHENOL	获取价格	Card Edge Connector, 10 Contact(s), 1 Row(s), Male, Straight, Solder Terminal, LEAD FREE
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