Datasheet > SLD_U7N70S

SLD_U7N70S

更新时间： 2024-11-18 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	625K
描述
TO-252&TO-251

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数据手册

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SLD_U7N70S 数据手册

SLD7N70S / SLU7N70S

700V N-Channel MOSFET

General Description

Features

- N-Channel:700V 7A

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

R_DS(on)Typ= 1.3Ω@V_GS= 10 V

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

I-PAK

D-PAK

SLD7N70S

SLU7N70S

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD7N70S / SLU7N70S

Units

Drain-Source Voltage

700

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

4.2

(Note 1)

I_DM

Drain Current

V_GSS

Gate-Source Voltage

E_AS

P_D

Single Pulsed Avalanche Energy

121

Power Dissipation (T_C= 25℃)

R _θJC

Thermal Resistance, Junction to Case

3.07

W/℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

℃

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Sep. 2020

12 3 4 5 6 7...9

中文翻译

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