Datasheet > SLD-1000

SLD-1000

更新时间： 2024-11-08 03:31:43

品牌	Logo	应用领域
SIRENZA		/
页数	文件大小	规格书
5页	332K
描述
4 Watt Discrete LDMOS FET-Bare Die

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SLD-1000 数据手册

SLD-1000

Product Description

4 Watt Discrete LDMOS FET -Bare Die

Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance

LDMOS transistor die, designed for operation from 10 to 2700MHz. It

is an excellent solution for applications requiring high linearity and effi-

ciency. The SLD-1000 is typically used as a driver or output stage for

power amplifier, or transmitter applications. These robust power tran-

sistors are fabricated using Sirenza’s high performance XEMOS II^TM

process.

Functional Schematic Diagram

Product Features

• 4 Watt Output P_1dB

ESD

• Single Polarity Operation

• 19dB Gain at 900 MHz

Protection

• XeMOS II^TMLDMOS

• Integrated ESD Protection, Class 1B

• Aluminum Topside Metallization

• Gold Backside Metallization

Gate

Applications

Manifold

• Base Station PA Driver

• Repeaters

Drain

Manifold

• Military Communications

• RFID

Source - Backside Contact

• GSM, CDMA, Edge, WDCDMA

RF Specifications

Symbol

Frequency

Gain

Parameter

Unit

MHz

Min

Typ

Max

2700

Frequency of Operation

3.5 Watts CW, 900 MHz

Drain Efficiency at 3.5 Watts CW, 900 MHz

-30

Efficiency

^rdOrder IMD at 3.5 Watts PEP (Two Tone) 900 MHz

dBc

Watts

ºC/W

Linearity

1dB Compression (P_1dB) 900 MHz

R_TH

Thermal Resistance (Junction-to-Case, mounted in package)

Test Conditions: Mounted in ceramic package and tested in Sirenza Evaluation Board V_DS= 28.0V, I_DQ= 30mA, T_{Mounting Surface}= 25ºC

DC Specifications

Symbol

g_m

Parameter

Forward Transconductance @ 30mA I_DS

I_DS=3mA

1mA I_DSCurrent

Input Capacitance (Gate to Source) V_GS=0V, V_DS=28V

Reverse Capacitance (Gate to Drain) V_GS=0V, V_DS=28V

Output Capacitance (Drain to Source) V_GS=0V, V_DS=28V

Drain to Source Resistance, V_GS=10V V_DS=250mV

Unit

mA / V

Volts

Min

Typical

150

4.2

5.2

0.2

3.2

3.0

Max

V_GSThreshold

V_DSBreakdown

C_iss

3.0

5.0

C_rss

C_oss

R_DSon

Ω

3.5

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such

information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices

3^do0^e3^{s n}S^ot.^aT^ute^hoc^rh^izn^eo^orlo^wg^ary^raC^nto^anu^yrt^S,^{irenza Microdevices product for use in life-support devices and/or sy}P^steh^mo^sn^.e^C:^op(^y8^ri0^gh0^t)²⁰S⁰M^{5 S}I-^irM^enM^zaI^MC^{icrodevices, Inc. All worldwide rights reserved.}

http://www.sirenza.com

EDS-104291 Rev C

Broomfield, CO 80021

12 3 4 5

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