Datasheet > SLD_P20P10T

SLD_P20P10T

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	683K
描述
TO-252&TO-220C

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中文翻译

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数据手册

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SLD_P20P10T 数据手册

SLD20P10T/SLP20P10T

100V P -Channel MOSFET

Features

General Description

- N-Channel:-100V -20A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 59mΩ@V_GS= 10 V

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

TO-220C

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD20P10T/SLP20P10T

Units

Drain-Source Voltage

-100

-20

-17

-80

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

102

P_D

Power Dissipation (T_C= 100℃)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to ambient

Operating and Storage Temperature Range

1.22

R _θJC

R _θJA

℃/W

℃

T_J, T_STG

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2020

12 3 4 5 6 7...9

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