Datasheet > SKM150GAL12V_11

SKM150GAL12V_11

更新时间： 2024-11-05 09:24:11

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赛米控丹佛斯 - SEMIKRON		/
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5页	329K
描述
SEMITRANS

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数据手册

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SKM150GAL12V_11 数据手册

SKM150GAL12V

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

231

176

150

450

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

V_CC= 720 V

-20 ... 20

SEMITRANS^®2

_GE≤ 20 V

_CES≤ 1200 V

T_j= 125 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

189

141

150

450

900

T_j= 175 °C

SKM150GAL12V

Features

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• V-IGBT = 6. Generation Trench V-IGBT

(Fuji)

-40 ... 175

°C

Freewheeling diode

I_F

• CAL4 = Soft switching 4. Generation

CAL-diode

T_c= 25 °C

T_c= 80 °C

189

141

150

450

900

T_j= 175 °C

• Isolated copper baseplate using DBC

technology (Direct Copper Bonding)

• UL recognized, file no. E63532

• Increased power cycling capability

• With integrated gate resistor

• Low switching losses at high di/dt

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

-40 ... 175

°C

Typical Applications*

Module

I_t(RMS)

T_stg

• DC/DC – converter

• Brake chopper

T_terminal= 80 °C

200

-40 ... 125

4000

°C

• Switched reluctance motor

• DC – Motor

V_isol

AC sinus 50Hz, t = 1 min

Remarks

Characteristics

• Case temperature limited to

T_c= 125°C max, recomm.

Symbol Conditions

IGBT

min.

typ.

max.

Unit

T_op= -40 ... +150°C, product

I_C= 150 A

rel. results valid for T_j= 150°

T_j= 25 °C

V_CE(sat)

1.75

2.20

2.50

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.94

0.88

5.40

8.80

1.04

0.98

7.7

10.13

6.5

m



V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 6 mA

V_GE= 0 V

5.5

T_j= 25 °C

T_j= 150 °C

f = 1 MHz

0.1

0.3

_CE= 1200 V

C_ies

C_oes

C_res

Q_G

V_CE= 25 V

_GE= 0 V

0.89

0.884

1650

5.0

V_GE= - 8 V...+ 15 V

R_Gint

GAL

Rev. 3 – 23.03.2011

12 3 4 5

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