Datasheet > SKM150GAR12V

SKM150GAR12V

更新时间： 2024-11-24 18:05:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		栅
页数	文件大小	规格书
6页	310K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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SKM150GAR12V 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.68
Base Number Matches：	1

SKM150GAR12V 数据手册

SKM150GAR12V

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

231

176

150

450

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 xI_Cnom

V_CC= 720 V

-20 ... 20

SEMITRANS^®2

_GE≤ 15 V

_CES≤ 1200 V

T_j= 125 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

189

141

150

450

900

T_j= 175 °C

SKM150GAR12V

Features

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• V-IGBT = 6. Generation Trench V-IGBT

(Fuji)

-40 ... 175

°C

Freewheeling diode

I_F

• CAL4 = Soft switching 4. Generation

CAL-diode

T_c= 25 °C

T_c= 80 °C

189

141

150

450

900

T_j= 175 °C

• Insulated copper baseplate using DBC

technology (Direct Copper Bonding)

• Increased power cycling capability

• With integrated gate resistor

• UL recognized, file no. E63532

• Lowest switching losses at High di/dt

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

AC sinus 50 Hz, t = 1 min

-40 ... 175

°C

Typical Applications*

Module

I_t(RMS)

T_stg

• Electronic welders

• DC/DC – converter

• Brake chopper

200

-40 ... 125

4000

°C

V_isol

• Switched reluctance motor

Remarks

Characteristics

• Case temperature limited to T_c= 125°C

max.

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• Recommended T_op= -40 ... +150°C

• Product reliability results valid for T_j=

150°C

I_C= 150 A

T_j= 25 °C

V_CE(sat)

1.75

2.20

2.48

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.94

0.88

5.4

8.8

1.04

0.98

7.7

6.5

0.3

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 6 mA

V_GE= 0 V

5.5

T_j= 25 °C

T_j= 150 °C

f = 1 MHz

_CE= 1200 V

C_ies

C_oes

C_res

Q_G

9.0

V_CE= 25 V

_GE= 0 V

0.89

0.88

1650

5.0

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAR

Rev. 1.0 – 31.01.2019

12 3 4 5 6

中文翻译

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