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SKM150GB12T4G_09 PDF预览

SKM150GB12T4G_09

更新时间: 2024-11-21 06:11:51
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赛米控丹佛斯 - SEMIKRON 双极性晶体管
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描述
Fast IGBT4 Modules

SKM150GB12T4G_09 数据手册

 浏览型号SKM150GB12T4G_09的Datasheet PDF文件第2页浏览型号SKM150GB12T4G_09的Datasheet PDF文件第3页浏览型号SKM150GB12T4G_09的Datasheet PDF文件第4页浏览型号SKM150GB12T4G_09的Datasheet PDF文件第5页 
SKM150GB12T4G  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
223  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 175 °C  
172  
ICnom  
150  
ICRM  
ICRM = 3xICnom  
450  
VGES  
-20 ... 20  
SEMITRANS®3  
VCC = 800 V  
VGE 15 V  
VCES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Fast IGBT4 Modules  
SKM150GB12T4G  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
183  
137  
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
150  
A
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
450  
A
Features  
774  
A
• IGBT4 = 4. Generation (Trench)IGBT  
• VCEsat with positive temperature  
coefficient  
• High short circuit capability, self  
limiting to 6 x ICNOM  
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
500  
-40 ... 125  
4000  
A
°C  
V
• Soft switching 4. Generation CAL  
diode (CAL4)  
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications  
• AC inverter drives  
• UPS  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Electronic welders at fsw up to 20 kHz  
IC = 150 A  
VCE(sat)  
Tj = 25 °C  
1.85  
2.25  
2.1  
V
V
Remarks  
V
GE = 15 V  
• Case temperature limited to  
Tc = 125°C max, recomm.  
Top = -40 ... +150°C, product  
rel. results valid for Tj = 150°  
Tj = 150 °C  
2.45  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
7.0  
10.3  
5.8  
0.1  
0.9  
0.8  
V
V
8.0  
mΩ  
mΩ  
V
VGE = 15 V  
11.0  
6.5  
VGE(th)  
ICES  
VGE=VCE, IC = 6 mA  
VGE = 0 V  
5
Tj = 25 °C  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
0.3  
mA  
mA  
nF  
nF  
nF  
nC  
V
CE = 1200 V  
Cies  
Coes  
Cres  
QG  
8.8  
0.58  
0.47  
850  
5.0  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
td(on)  
tr  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
175  
38  
ns  
VCC = 600 V  
IC = 150 A  
ns  
V
GE = ±15 V  
Eon  
td(off)  
tf  
18.7  
400  
78  
mJ  
ns  
R
R
G on = 1 Ω  
G off = 1 Ω  
ns  
di/dton = 4400 A/µs  
di/dtoff = 1800 A/µs  
Eoff  
Rth(j-c)  
14.1  
mJ  
K/W  
per IGBT  
0.2  
GB  
© by SEMIKRON  
Rev. 0 – 19.02.2009  
1

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