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SKM181A3

更新时间： 2024-11-09 20:01:23
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 177K
描述
Power Field-Effect Transistor, 36A I(D), 800V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE D15, SEMITRANS-4

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中文翻译

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SKM181A3 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-XUFM-X4
针数：4Reach Compliance Code：unknown
风险等级：5.84其他特性：UL RECOGNIZED
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：800 V最大漏极电流 (Abs) (ID)：36 A
最大漏极电流 (ID)：36 A最大漏源导通电阻：0.21 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XUFM-X4
元件数量：1端子数量：4
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：700 W最大脉冲漏极电流 (IDM)：144 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SKM181A3 数据手册

 浏览型号SKM181A3的Datasheet PDF文件第2页浏览型号SKM181A3的Datasheet PDF文件第3页浏览型号SKM181A3的Datasheet PDF文件第4页 
SEMITRANS® M  
Power MOSFET Modules  
Absolute Maximum Ratings  
Symbol Conditions 1)  
VDS  
Values  
Units  
V
V
A
A
800  
800  
36  
SKM 181 A3 3)  
SKM 181 A3R *)  
Ω
RGE = 20 k  
VDGR  
ID  
IDM  
144  
VGS  
PD  
Tj, (Tstg  
± 20  
700  
V
W
°C  
V
)
–40 ... +150 (125)  
2 500  
Visol  
AC, 1 min.  
humidity DIN 40 040  
Class F  
40/125/56  
climate  
DIN IEC 68 T.1  
Inverse Diode  
IF = –ID  
IFM = –IDM  
36  
144  
A
A
SEMITRANS M1  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
V(BR)DSS VGS = 0, ID = 0,25 mA  
800  
2,1  
–
–
–
–
3,0  
50  
300  
10  
170  
33  
–
4,0  
100  
1000  
100  
210  
–
V
V
VGS(th)  
IDSS  
V
GS = VDS, ID = 1 mA  
µ
µ
VGS = 0  
VDS = 800 V  
Tj = 25 °C  
Tj = 125 °C  
A
A
IGSS  
RDS(on)  
gfs  
V
V
V
GS = 20 V, VDS = 0  
GS = 10 V, ID = 23 A  
DS = 10 V, ID = 23 A  
nA  
Ω
m
S
SKM 181 A3 SKM 181 A3R *)  
Features  
–
16  
CCHC  
Ciss  
Coss  
Crss  
LDS  
–
–
–
–
–
–
160  
14  
1,7  
0,8  
20  
pF  
nF  
nF  
nF  
nH  
VGS = 0  
VDS = 25 V  
f = 1 MHz  
10  
1,2  
0,6  
–
•
•
N Channel, enhancement mode  
Short internal connections avoid  
oscillations  
•
•
•
•
DCB-ceramic isolated copper  
baseplate  
All electrical connections on top  
for easy busbaring  
Large clearance (10 mm) and  
creepage distances (13 mm)  
UL recognized, file no. E63 532  
td(on)  
tr  
td(off)  
tf  
Inverse Diode 8)  
VDD = 400 V  
ID = 23 A  
VGS = 10 V  
–
–
–
–
60  
30  
350  
70  
–
–
–
–
ns  
ns  
ns  
ns  
Ω
Ω)  
RG = 4,7 (SKM 181A3R: 3,3  
VSD  
trr  
IF = 72 A, VGS = 0 V  
–
–
–
–
–
0,9  
1200  
–
1,2  
–
–
–
–
V
ns  
ns  
Tj = 25 °C 2)  
Tj = 150 °C 2)  
Tj = 25 °C 2)  
Tj = 150 °C 2)  
Typical Applications  
µ
Qrr  
42  
C
µ
C
•
•
•
•
•
•
•
•
•
Switched mode power supplies  
DC servo and robot drives  
DC choppers  
Resonant and welding inverters  
AC motor drives  
Laser power supplies  
UPS equipment  
Plasma cutting  
Thermal characteristics  
Rthjc  
–
–
–
–
0,18  
0,05  
°C/W  
°C/W  
µ
M1, surface 10 m  
Rthch  
Mechanical Data  
M1  
to heatsink, SI Units  
to heatsink, US Units  
for terminals, SI Units  
for terminals, US Units  
4
35  
2,5  
22  
–
–
–
–
–
–
–
5
44  
3,5  
24  
5x9,81  
130  
Nm  
lb.in.  
Nm  
lb.in.  
m/s2  
g
Not suitable for linear  
amplification  
M2  
*) SKM 181 A3R has built-in gate  
resistor chips (“R”) Rginternal  
a
w
=
–
1,3Ω, preferred typed for paralle-  
ling and for lower switching fre-  
quencies  
→
Case  
B 5 – 25  
D15  
1)  
2)  
3)  
Tcase = 25 °C, unless otherwise specified  
IF = – ID, VR = 100 V, –diF/dt = 100 A/ s  
SKM 181 A 3 (with standard recovery body drain diode) can replace old SKM 181 F  
(with fast recovery body drain diode) only in DC-choppers and resonant inverters which  
do not use the fast recovery feature i. e. fsw > f resonant, but not for fsw < fr and not for  
PWM-inverters. In doubt please ask SEMIKRON.  
µ
This is an electrostatic dischar-  
ge sensitive device (ESDS).  
Please observe the international  
standard IEC 747-1, Chapter IX.  
© by SEMIKRON  
0898  
B 5 – 23  
1234

中文翻译

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