Datasheet > SKM150GB12F4

SKM150GB12F4

更新时间： 2024-11-06 14:53:43

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
7页	582K
描述
Chips SEMITRANS 2 (94x34x30)

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中文翻译

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SKM150GB12F4 数据手册

SKM150GB12F4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

201

153

150

300

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITRANS^®2

High Speed IGBT4 Modules

SKM150GB12F4

V_CC= 800 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1200 V

_{G on/off}≥ 2.7 Ω

T_j

Inverse diode

T_j= 25 °C

-40 ... 175

V_RRM

I_F

1200

174

128

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

Features*

• High speed trench and field-stop IGBT

• CAL4 ultra-fast = soft switching 4.

generation CAL-diode

I_FRM

I_FSM

T_j

300

774

-40 ... 175

°C

t_p= 10 ms, sin 180°, T_j= 25 °C

Module

I_t(RMS)

T_stg

• Insulated copper baseplate using DBC

technology (Direct Bonded Copper)

• Increased power cycling capability

• For higher switching frequencies above

15kHz

200

-40 ... 125

4000

°C

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

• UL recognized, file no. E63532

Characteristics

Symbol Conditions

IGBT

Typical Applications

• UPS

• Electronic welders

• Inductive heating

• Switched mode power supplies

min.

typ.

max.

Unit

I_C= 150 A

T_j= 25 °C

V_CE(sat)

2.05

2.60

2.42

2.93

_GE= 15 V

T_j= 150 °C

chiplevel

Remarks

• Case temperature limited

to T_c= 125°C max.

• Recommended T_op= -40 ... +150°C

• Product reliability results valid

for T_j= 150°C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

1.10

0.95

6.3

5.8

1.28

1.13

7.6

6.4

2.0

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE=V_CE, I_C= 5.2 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.2

8.8

0.58

0.47

850

2.4

14.5

300

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 150 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 2 Ω

_{G off}= 1 Ω

di/dt_on= 4200 A/µs

di/dt_off= 1880 A/µs

dv/dt = 4800 V/µs

L_s= 25 nH

T_j= 150 °C

E_off

R_th(j-c)

R_th(c-s)

per IGBT

per IGBT (λ_grease=0.81 W/(m*K))

0.2

K/W

0.072

Rev. 1.0 – 11.06.2020

12 3 4 5 6 7

中文翻译

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