Datasheet > SKM150GB12T4_09

SKM150GB12T4_09

更新时间： 2024-11-21 06:11:51

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	481K
描述
Fast IGBT4 Modules

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中文翻译

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SKM150GB12T4_09 数据手册

SKM150GB12T4

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

232

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

179

I_Cnom

150

I_CRM

I_CRM= 3xI_Cnom

450

V_GES

-20 ... 20

SEMITRANS^®2

V_CC= 800 V

V_GE≤ 15 V

V_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Fast IGBT4 Modules

SKM150GB12T4

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

189

141

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

150

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

450

Features

900

• IGBT4 = 4. Generation (Trench)IGBT

• VCEsat with positive temperature

coefficient

• High short circuit capability, self

limiting to 6 x I_CNOM

-40 ... 175

°C

Module

I_t(RMS)

T_stg

200

-40 ... 125

4000

°C

• Soft switching 4. Generation CAL

diode (CAL4)

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications

• AC inverter drives

• UPS

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• Electronic welders at fsw up to 20 kHz

I_C= 150 A

V_CE(sat)

T_j= 25 °C

1.8

2.2

2.05

2.4

Remarks

_GE= 15 V

• Case temperature limited to

Tc = 125°C max, recomm.

Top = -40 ... +150°C, product

rel. results valid for Tj = 150°

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

6.7

10.0

5.8

0.1

0.9

0.8

7.7

mΩ

V_GE= 15 V

10.7

6.5

V_GE(th)

I_CES

V_GE=V_CE, I_C= 6 mA

V_GE= 0 V

T_j= 25 °C

T_j= 150 °C

f = 1 MHz

0.3

Ω

_CE= 1200 V

C_ies

C_oes

C_res

Q_G

9.3

0.58

0.51

850

5.0

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

T_j= 150 °C

180

V_CC= 600 V

I_C= 150 A

_GE= ±15 V

E_on

t_d(off)

t_f

19.2

410

_{G on}= 1 Ω

_{G off}= 1 Ω

di/dt_on= 3400 A/µs

di/dt_off= 1750 A/µs

E_off

R_th(j-c)

15.8

K/W

per IGBT

0.19

Rev. 0 – 19.02.2009

12 3 4 5

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