Datasheet > SiHG40N60E

SiHG40N60E

更新时间： 2023-12-06 20:00:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	470K
描述
E Series Power MOSFET

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SiHG40N60E 数据手册

SiHG40N60E

Vishay Siliconix

www.vishay.com

V_DS= 480 V

V_DS= 300 V

_DS= 120 V

100

150

200

250

100

125

150

Q_g, Total Gate Charge (nC)

T_C, Case Temperature (°C)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 10 - Maximum Drain Current vs. Case Temperature

750

725

700

675

650

625

600

100

T_J= 150 °C

T_J= 25 °C

575

I_D= 250 μA

V_GS= 0 V

1.2 1.4

0.1

550

0.2

0.4

0.6

0.8

1.0

-60 -40 -20

20 40 60 80 100 120 140 160

V_SD, Source-Drain Voltage (V)

T_J, Junction Temperature (°C)

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 11 - Temperature vs. Drain-to-Source Voltage

Operation in this area

Limited by R_DS(on)

I_DMlimited

100

100 μs

1 ms

Limited by R_DS(on)

10 ms

0.1

0.01

T_C= 25 °C

T_J= 150 °C

Single pulse

BVDSS limited

100

1000

V_DS, Drain-to-Source Voltage (V)

* V_GS> minimum V_GSat which R_DS(on)is speciﬁed

Fig. 9 - Maximum Safe Operating Area

S16-0659-Rev. A, 18-Apr-16

Document Number: 91802

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 345 6 7...10

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