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SiHH080N60E PDF预览

SiHH080N60E

更新时间: 2023-12-06 20:03:04
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 182K
描述
E Series Power MOSFET

SiHH080N60E 数据手册

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SiHH080N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
Pin 4: drain  
• 4th generation E series technology  
• Low figure of merit (FOM) Ron x Qg  
• Low effective capacitance (Co(er)  
PowerPAK® 8 x 8  
Pin 1:  
gate  
)
4
• Reduced switching and conduction losses  
• Avalanche energy rated (UIS)  
1
Pin 2:  
Kelvin connection  
2
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
3
Pin 3: source  
3
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) typ. (Ω) at 25 °C  
VGS = 10 V  
0.070  
Qg max. (nC)  
63  
19  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Q
gs (nC)  
gd (nC)  
Q
10  
Configuration  
Single  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
PowerPAK 8 x 8  
Lead (Pb)-free and halogen-free  
SIHH080N60E-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
30  
T
C = 25 °C  
32  
Continuous drain current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
20  
A
Pulsed drain current a  
IDM  
96  
Linear derating factor  
1.47  
226  
W/°C  
mJ  
W
Single pulse avalanche energy b  
Maximum power dissipation  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dv/dt d  
EAS  
PD  
184  
TJ, Tstg  
-55 to +150  
100  
°C  
TJ = 125 °C  
dv/dt  
V/ns  
10  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A  
c. 1.6 mm from case  
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C  
S23-0654-Rev. C, 21-Aug-2023  
Document Number: 92379  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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