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SiHH14N65E PDF预览

SiHH14N65E

更新时间: 2024-11-25 14:55:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 189K
描述
E Series Power MOSFET

SiHH14N65E 数据手册

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SiHH14N65E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
Pin 4: drain  
FEATURES  
PowerPAK® 8 x 8  
• Completely lead (Pb)-free device  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
Pin 1:  
gate  
4
)
1
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
Pin 2:  
Kelvin connection  
2
3
3
• Avalanche energy rated (UIS)  
Pin 3: source  
N-Channel MOSFET  
• Kelvin connection for reduced gate noise  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
700  
APPLICATIONS  
RDS(on) typ. (Ω) at 25 °C  
VGS = 10 V  
0.225  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
Qg max. (nC)  
96  
12  
Q
gs (nC)  
gd (nC)  
Q
21  
Configuration  
Single  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
PowerPAK 8 x 8  
Lead (Pb)-free and Halogen-free  
SiHH14N65E-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
650  
V
VGS  
30  
T
C = 25 °C  
15  
10  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Current a  
IDM  
38  
Linear Derating Factor  
1.25  
226  
W/°C  
mJ  
W
Single Pulse Avalanche Energy b  
Maximum Power Dissipation  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dt c  
EAS  
PD  
156  
TJ, Tstg  
-55 to +150  
70  
°C  
TJ = 125 °C  
dV/dt  
V/ns  
19  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4 A.  
c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S23-0651-Rev. C, 21-Aug-2023  
Document Number: 91730  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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