Datasheet > SiHH190N65E

SiHH190N65E

更新时间： 2024-11-25 17:15:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	203K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHH190N65E 数据手册

SiHH190N65E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

Pin 4: drain

• 4^thgeneration E series technology

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

PowerPAK^®8 x 8

Pin 1:

gate

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

Pin 2:

Kelvin connection

• Kelvin connection for reduced gate noise

Pin 3: source

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

700

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.165

Q_gmax. (nC)

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

PowerPAK^®8 x 8

Lead (Pb)-free and halogen-free

SiHH190N65E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

650

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^c

E_AS

P_D

130

T_J, T_stg

-55 to +150

100

°C

dv/dt

V/ns

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 1.8 A

c. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S24-0366-Rev. A, 08-Apr-2024

Document Number: 92550

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SiHH190N65E相关器件

型号	品牌	获取价格	描述	数据表
SiHH20N50E	VISHAY	获取价格	E Series Power MOSFET
SiHH21N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH21N60EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SIHH21N60E-T1-GE3	VISHAY	获取价格	MOSFET N-CH 600V 20A POWERPAK8X8
SiHH21N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH21N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SIHH21N65EF-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, M
SiHH240N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH240N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH24N65E	VISHAY	获取价格	E Series Power MOSFET