5秒后页面跳转
SiHH20N50E PDF预览

SiHH20N50E

更新时间: 2024-11-25 14:52:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 194K
描述
E Series Power MOSFET

SiHH20N50E 数据手册

 浏览型号SiHH20N50E的Datasheet PDF文件第2页浏览型号SiHH20N50E的Datasheet PDF文件第3页浏览型号SiHH20N50E的Datasheet PDF文件第4页浏览型号SiHH20N50E的Datasheet PDF文件第5页浏览型号SiHH20N50E的Datasheet PDF文件第6页浏览型号SiHH20N50E的Datasheet PDF文件第7页 
SiHH20N50E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
Pin 4: drain  
• Completely lead (Pb)-free device  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
PowerPAK® 8 x 8  
)
Pin 1:  
gate  
4
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
1
Pin 2:  
Kelvin connection  
2
• Avalanche energy rated (UIS)  
3
3
• Kelvin connection for reduced gate noise  
Pin 3: source  
N-Channel MOSFET  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
APPLICATIONS  
VDS (V) at TJ max.  
550  
0.147  
70  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
RDS(on) max. (Ω) at 25 °C  
VGS = 10 V  
Qg max. (nC)  
Q
gs (nC)  
gd (nC)  
9
Q
15  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Configuration  
Single  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
PowerPAK 8 x 8  
Lead (Pb)-free and Halogen-free  
SiHH20N50E-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
500  
V
VGS  
30  
T
C = 25 °C  
22  
Continuous Drain Current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
14  
A
Pulsed Drain Current a  
IDM  
53  
1.4  
Linear Derating Factor  
W/°C  
mJ  
W
Single Pulse Avalanche Energy b  
Maximum Power Dissipation  
Operating Junction and Storage Temperature Range  
Drain-Source Voltage Slope  
Reverse Diode dV/dt c  
EAS  
PD  
286  
174  
TJ, Tstg  
-55 to +150  
70  
°C  
TJ = 125 °C  
dV/dt  
V/ns  
19  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature.  
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A.  
c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  
S23-0652-Rev. B, 21-Aug-2023  
Document Number: 91847  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiHH20N50E相关器件

型号 品牌 获取价格 描述 数据表
SiHH21N60E VISHAY

获取价格

E Series Power MOSFET
SiHH21N60EF VISHAY

获取价格

E Series Power MOSFET with Fast Body Diode
SIHH21N60E-T1-GE3 VISHAY

获取价格

MOSFET N-CH 600V 20A POWERPAK8X8
SiHH21N65E VISHAY

获取价格

E Series Power MOSFET
SiHH21N65EF VISHAY

获取价格

E Series Power MOSFET with Fast Body Diode
SIHH21N65EF-T1-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, M
SiHH240N60E VISHAY

获取价格

E Series Power MOSFET
SiHH240N65E VISHAY

获取价格

E Series Power MOSFET
SiHH24N65E VISHAY

获取价格

E Series Power MOSFET
SiHH24N65EF VISHAY

获取价格

E Series Power MOSFET with Fast Body Diode