Datasheet > SIHJ7N65E

SIHJ7N65E

更新时间： 2024-09-25 01:19:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	217K
描述
E Series Power MOSFET

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数据手册

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SIHJ7N65E 数据手册

SiHJ7N65E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

PRODUCT SUMMARY

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

V_DS(V) at T_Jmax.

_DS(on)typ. () at 25 °C

Q_gmax. (nC)

700

)

V_GS= 10 V

0.520

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

_gs(nC)

_gd(nC)

• Avalanche energy rated (UIS)

Configuration

Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PowerPAK^®SO-8L Single

APPLICATIONS

• Switch mode power supplies (SMPS)

• Flyback converter

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer

N-Channel MOSFET

- Wall adaptors

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and Halogen-free

SiHJ7N65E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

650

V_GS

_C= 25 °C

7.9

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

5.0

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

0.77

W/°C

Single Pulse Avalanche Energy ^b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

E_AS

P_D

-55 to +150

T_J, T_stg

°C

T_J= 125 °C

dV/dt

V/ns

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 120 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 2.2 A.

c. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

R_thJA

°C/W

R_thJC

1.0

1.3

S16-0659-Rev. A, 18-Apr-16

Document Number: 91823

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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