Datasheet > SiHH24N65EF

SiHH24N65EF

更新时间： 2024-11-13 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	194K
描述
E Series Power MOSFET with Fast Body Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHH24N65EF 数据手册

SiHH24N65EF

Vishay Siliconix

www.vishay.com

E Series Power MOSFET with Fast Body Diode

FEATURES

Pin 4: drain

• Completely lead (Pb)-free device

PowerPAK^®8 x 8

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

)

Pin 1:

gate

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

Pin 2:

Kelvin connection

• Avalanche energy rated (UIS)

• Kelvin connection for reduced noise

Pin 3: source

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

700

0.137

117

R_DS(on)typ. (Ω) at 25 °C

V_GS= 10 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

PowerPAK 8 x 8

Lead (Pb)-free and Halogen-free

SiHH24N65EF-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

650

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

1.61

353

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt ^c

E_AS

P_D

202

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 5 A

c. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

S23-0652-Rev. B, 21-Aug-2023

Document Number: 91783

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SiHH24N65EF相关器件

型号	品牌	获取价格	描述	数据表
SiHH250N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHH26N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH26N60EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHH27N60EF	VISHAY	获取价格	E Series Power MOSFET With Fast Body Diode
SiHH28N60E	VISHAY	获取价格	E Series Power MOSFET
SiHJ10N60E	VISHAY	获取价格	E Series Power MOSFET
SiHJ240N60E	VISHAY	获取价格	E Series Power MOSFET
SiHJ690N60E	VISHAY	获取价格	E Series Power MOSFET
SiHJ6N65E	VISHAY	获取价格	E Series Power MOSFET
SIHJ7N65E	VISHAY	获取价格	E Series Power MOSFET