Datasheet > SiHK185N60E

SiHK185N60E

更新时间： 2024-09-25 14:53:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	253K
描述
E Series Power MOSFET

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SiHK185N60E 数据手册

SiHK185N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

PowerPAK^®10 x 12

• 4^thgeneration E series technology

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

Drain

tab

TAB

)

Gate

pin 1

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

Driver

source

pin 2

Source

pin 3 to 8

• Kelvin connection for reduced gate noise

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

0.160

R_DS(on)typ. () at 25 °C

V_GS= 10 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

PowerPAK 10 x 12

Lead (Pb)-free and halogen-free

SiHK185N60E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

0.9

Linear derating factor

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^c

E_AS

P_D

114

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

dv/dt

V/ns

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 2.3 A

c. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S22-0755-Rev. C, 29-Aug-2022

Document Number: 92433

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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