Datasheet > SiHH186N60EF

SiHH186N60EF

更新时间： 2024-11-25 14:52:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	179K
描述
EF Series Power MOSFET With Fast Body Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHH186N60EF 数据手册

SiHH186N60EF

www.vishay.com

Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

FEATURES

• 4^thgeneration E series technology

Pin 4: drain

PowerPAK^®8 x 8

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

Pin 1:

gate

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

Pin 2:

Kelvin connection

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Pin 3: source

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

0.168

R_DS(on)typ. (Ω) at 25 °C

V_GS= 10 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Welding

- Induction heating

Configuration

Single

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

PowerPAK 8 x 8

Lead (Pb)-free and halogen-free

SiHH186N60EF-T1GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

0.9

Linear derating factor

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^c

E_AS

P_D

114

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

dv/dt

V/ns

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 1.3 A

c. I_SD≤ I_D, di/dt = 700 A/μs, starting T_J= 25 °C

S23-0653-Rev. C, 21-Aug-2023

Document Number: 92278

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiHH186N60EF相关器件

型号	品牌	获取价格	描述	数据表
SiHH190N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH20N50E	VISHAY	获取价格	E Series Power MOSFET
SiHH21N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH21N60EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SIHH21N60E-T1-GE3	VISHAY	获取价格	MOSFET N-CH 600V 20A POWERPAK8X8
SiHH21N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH21N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SIHH21N65EF-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, M
SiHH240N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH240N65E	VISHAY	获取价格	E Series Power MOSFET