Datasheet > SiHH11N60EF

SiHH11N60EF

更新时间： 2024-11-25 14:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	189K
描述
EF Series Power MOSFET with Fast Body Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHH11N60EF 数据手册

SiHH11N60EF

Vishay Siliconix

www.vishay.com

EF Series Power MOSFET with Fast Body Diode

Pin 4: drain

FEATURES

• Fast body diode MOSFET using E series

technology

PowerPAK^®8 x 8

Pin 1:

gate

• Reduced t_rr, Q_rr, and I_RRM

• Completely lead (Pb)-free device

• Low figure-of-merit (FOM) R_onx Q_g

Pin 2:

Kelvin connection

• Low input capacitance (C_iss

)

Pin 3: source

N-Channel MOSFET

• Low switching losses due to reduced Q_rr

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

APPLICATIONS

R_DS(on)typ. (Ω) at 25 °C

V_GS= 10 V

0.310

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

Q_gmax. (nC)

_gs(nC)

_gd(nC)

Configuration

Single

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

PowerPAK 8 x 8

Lead (Pb)-free and Halogen-free

SiHH11N60EF-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

0.9

Linear derating factor

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt ^c

E_AS

P_D

127

114

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 3 A

c. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

S23-0651-Rev. B, 21-Aug-2023

Document Number: 91726

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SiHH11N60EF相关器件

型号	品牌	获取价格	描述	数据表
SiHH11N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH11N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHH120N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH125N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHH125N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH14N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH14N60EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHH14N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH14N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SIHH14N65E-T1-GE3	VISHAY	获取价格	MOSFET N-CH 650V 15A PWRPAK 8X8