Datasheet > SiHG40N60E

SiHG40N60E

更新时间： 2023-12-06 20:00:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	470K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHG40N60E 数据手册

SiHG40N60E

Vishay Siliconix

www.vishay.com

Duty cycle = 0.5

0.2

0.1

0.01

0.05

0.02

0.001

Single pulse

0.0001

0.00001

0.0001

0.001

0.01

0.1

Pulse Time (s)

Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case

R_D

V_DS

t_p

V_GS

V_DD

D.U.T.

R_G

V_DS

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

I_AS

Fig. 13 - Switching Time Test Circuit

Fig. 16 - Unclamped Inductive Waveforms

V_DS

Q_G

10 V

90 %

Q_GS

Q_GD

10 %

V_GS

V_G

t_d(on)t_r

t_d(off)t_f

Charge

Fig. 14 - Switching Time Waveforms

Fig. 17 - Basic Gate Charge Waveform

Current regulator

V_DS

Same type as D.U.T.

Vary t_pto obtain

required I_AS

50 kΩ

12 V

0.2 µF

D.U.T

I_AS

R_G

0.3 µF

V_DD

V_DS

D.U.T.

10 V

0.01 Ω

t_p

V_GS

3 mA

Fig. 15 - Unclamped Inductive Test Circuit

I_G

I_D

Current sampling resistors

Fig. 18 - Gate Charge Test Circuit

Document Number: 91802

S16-0659-Rev. A, 18-Apr-16

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 3 456 7 8...10

中文翻译

下载PDF

与SiHG40N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHG44N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHG460B	VISHAY	获取价格	D Series Power MOSFET
SiHG460B-GE3	VISHAY	获取价格	D Series Power MOSFET
SiHG47N60AE	VISHAY	获取价格	E Series Power MOSFET
SiHG47N60AEF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHG47N60AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SIHG47N60E	VISHAY	获取价格	E Series Power MOSFET
SIHG47N60E-E3	VISHAY	获取价格	Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Me
SiHG47N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode
SIHG47N60E-GE3	VISHAY	获取价格	E Series Power MOSFET