Datasheet > SIHG80N60E-GE3

SIHG80N60E-GE3

更新时间： 2024-11-25 21:20:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	146K
描述
Power Field-Effect Transistor,

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SIHG80N60E-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	12 weeks	风险等级：	2.27
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SIHG80N60E-GE3 数据手册

SiHG80N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

TO-247AC

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.026

Q_gmax. (nC)

443

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

_gs(nC)

_gd(nC)

139

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and halogen-free

SiHG80N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

268

Linear derating factor

Single pulse avalanche energy ^b

4.2

W/°C

E_AS

P_D

1142

520

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

8.8

Soldering recommendations (peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 9 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S17-1719-Rev. B, 20-Nov-17

Document Number: 91911

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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