Datasheet > SiHG47N60AEF

SiHG47N60AEF

更新时间： 2024-11-26 14:53:55

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威世 - VISHAY		/
页数	文件大小	规格书
11页	456K
描述
EF Series Power MOSFET With Fast Body Diode

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SiHG47N60AEF 数据手册

SiHG47N60AEF

www.vishay.com

Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

TO-247AC

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. (Ω) at 25 °C

V_GS= 10 V

0.061

Q_gmax. (nC)

189

_gs(nC)

_gd(nC)

- Welding

- Induction heating

Configuration

Single

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and halogen-free

SiHG47N60AEF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

Pulsed drain current ^a

I_DM

111

Linear derating factor

Single pulse avalanche energy ^b

2.5

W/°C

E_AS

P_D

508

Maximum power dissipation

313

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 6.0 A

c. 1.6 mm from case

d. I_SD= 23.5 A, di/dt = 250 A/μs, starting T_J= 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

Maximum junction-to-case (drain)

R_thJA

°C/W

R_thJC

0.4

S20-0166-Rev. B, 23-Mar-2020

Document Number: 92033

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiHG47N60AEF相关器件

型号	品牌	获取价格	描述	数据表
SIHG47N60AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SIHG47N60E	VISHAY	获取价格	E Series Power MOSFET
SIHG47N60E-E3	VISHAY	获取价格	Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Me
SiHG47N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode
SIHG47N60E-GE3	VISHAY	获取价格	E Series Power MOSFET
SIHG47N60S-E3	VISHAY	获取价格	600 V Power mosfets
SiHG47N65E	VISHAY	获取价格	E Series Power MOSFET
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SiHG64N65E	VISHAY	获取价格	E Series Power MOSFET
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