Datasheet > SiHG80N60E

SiHG80N60E

更新时间： 2023-12-06 20:11:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	471K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHG80N60E 数据手册

SiHG80N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

TO-247AC

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.026

Q_gmax. (nC)

443

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

_gs(nC)

_gd(nC)

139

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and halogen-free

SiHG80N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

268

Linear derating factor

Single pulse avalanche energy ^b

4.2

W/°C

E_AS

P_D

1142

520

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

8.8

Soldering recommendations (peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 9 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S17-1719-Rev. B, 20-Nov-17

Document Number: 91911

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SiHG80N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHG80N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHG80N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHH068N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH070N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHH080N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH085N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHH100N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH100N65E	VISHAY	获取价格	E Series Power MOSFET
SiHH105N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHH11N60E	VISHAY	获取价格	E Series Power MOSFET