Datasheet > SiHG70N60AEF

SiHG70N60AEF

更新时间： 2024-11-26 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	458K
描述
EF Series Power MOSFET With Fast Body Diode

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SiHG70N60AEF 数据手册

SiHG70N60AEF

www.vishay.com

Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

FEATURES

• Fast body diode MOSFET using E series

technology

TO-247AC

• Reduced t_rr, Q_rr, and I_RRM

• Low figure-of-merit (FOM) R_onx Q_g

• Low switching losses due to reduced Q_rr

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

- High-intensity lighting (HID)

- Light emitting diodes (LEDs)

• Consumer and computing

- ATX power supplies

• Industrial

_DS(on)typ. () at 25 °C

V_GS= 10 V

0.0355

Q_gmax. (nC)

410

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switching mode power supplies (SMPS)

• Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free and halogen-free

SiHG70N60AEF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

Gate-source voltage AC (f > 1 Hz)

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

Pulsed drain current ^a

I_DM

173

Linear derating factor

Single pulse avalanche energy ^b

3.3

W/°C

E_AS

P_D

1019

417

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 8.5 A

c. 1.6 mm from case

d. I_SD= 35 A, di/dt = 300 A/μs, V_DS= 400 V

S17-1315-Rev. A, 21-Aug-17

Document Number: 91997

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与SiHG70N60AEF相关器件

型号	品牌	获取价格	描述	数据表
SiHG70N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode
SiHG73N60AE	VISHAY	获取价格	E Series Power MOSFET
SIHG73N60E	VISHAY	获取价格	E Series Power MOSFET
SIHG73N60E-E3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SIHG73N60E-GE3	VISHAY	获取价格	MOSF N CH 600V 73A E TO247AC
SiHG80N60E	VISHAY	获取价格	E Series Power MOSFET
SiHG80N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHG80N60E-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHH068N60E	VISHAY	获取价格	E Series Power MOSFET
SiHH070N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode

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