Datasheet > SiHG40N60E

SiHG40N60E

更新时间： 2023-12-06 20:00:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	470K
描述
E Series Power MOSFET

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SiHG40N60E 数据手册

SiHG40N60E

Vishay Siliconix

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

R_thJA

R_thJC

°C/W

0.38

SPECIFICATIONS (T_J= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNIT

Static

Drain-Source Breakdown Voltage

V_DS

V_GS= 0 V, I_D= 250 μA

Reference to 25 °C, I_D= 1 mA

V_DS= V_GS, I_D= 250 μA

600

V/°C

V_DSTemperature Coefficient

V_DS/T_J

V_GS(th)

0.70

Gate-Source Threshold Voltage (N)

V_GS

20 V

30 V

100

μA

Gate-Source Leakage

I_GSS

I_DSS

V_DS= 600 V, V_GS= 0 V

V_DS= 480 V, V_GS= 0 V, T_J= 125 °C

V_GS= 10 V I_D= 20 A

Zero Gate Voltage Drain Current

μA

0.075

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

R_DS(on)

g_fs

0.065

13.5



V_DS= 30 V, I_D= 20 A

Input Capacitance

C_iss

C_oss

C_rss

4436

208

V_GS= 0 V,

Output Capacitance

_DS= 100 V,

f = 1 MHz

Reverse Transfer Capacitance

Effective Output Capacitance, Energy

Related ^a

C_o(er)

C_o(tr)

126

542

V_DS= 0 V to 480 V, V_GS= 0 V

Effective Output Capacitance, Time

Related ^b

Total Gate Charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

131

197

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

_GS= 10 V

I_D= 20 A, V_DS= 480 V

107

191

1.2

V_DD= 480 V, I_D= 20 A,

_GS= 10 V, R_g= 9.1 

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

127

Gate Input Resistance

Drain-Source Body Diode Characteristics

R_g

f = 1 MHz, open drain

0.3

0.6



MOSFET symbol

showing the 

integral reverse

p - n junction diode

Continuous Source-Drain Diode Current

Pulsed Diode Forward Current

I_S

I_SM

123

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

V_SD

t_rr

T_J= 25 °C, I_S= 6.5 A, V_GS= 0 V

1.2

1190

19.8

μC

595

9.9

T_J= 25 °C, I_F= I_S= 20 A,

dI/dt = 100 A/μs, V_R= 25 V

Q_rr

I_RRM

Notes

a. C_o(er)is a fixed capacitance that gives the same energy as C_osswhile V_DSis rising from 0 % to 80 % V_DSS

b. C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 % to 80 % V_DSS

S16-0659-Rev. A, 18-Apr-16

Document Number: 91802

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

123 4 5 6 7...10

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与SiHG40N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHG44N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHG460B	VISHAY	获取价格	D Series Power MOSFET
SiHG460B-GE3	VISHAY	获取价格	D Series Power MOSFET
SiHG47N60AE	VISHAY	获取价格	E Series Power MOSFET
SiHG47N60AEF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHG47N60AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SIHG47N60E	VISHAY	获取价格	E Series Power MOSFET
SIHG47N60E-E3	VISHAY	获取价格	Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Me
SiHG47N60EF	VISHAY	获取价格	EF Series Power MOSFET with Fast Body Diode
SIHG47N60E-GE3	VISHAY	获取价格	E Series Power MOSFET

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