IRFBF30, SiHFBF30
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
900
Available
• Repetitive Avalanche Rated
R
DS(on) (Ω)
VGS = 10 V
3.7
RoHS*
• Fast Switching
Qg (Max.) (nC)
78
10
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Ease of Paralleling
42
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
D
DESCRIPTION
TO-220
Third generation MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220 package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220
IRFBF30PbF
SiHFBF30-E3
IRFBF30
Lead (Pb)-free
SnPb
SiHFBF30
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMITE
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
900
20
V
T
C = 25 °C
3.6
Continuous Drain Current
VGS at 10 V
ID
A
TC =100°C
2.3
Pulsed Drain Currenta
IDM
14
Linear Derating Factor
1.0
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
250
3.6
EAR
13
mJ
W
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
T
C = 25 °C
PD
125
1.5
dV/dt
TJ, Tstg
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
10
°C
for 10 s
6-32 or M3 screw
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 36 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12).
c. ISD ≤ 3.6 A, dI/dt ≤ 70 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91122
www.vishay.com
1
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS