Datasheet > SIHFBG30

SIHFBG30

更新时间： 2024-10-15 12:34:51

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	4038K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHFBG30 数据手册

IRFBG30, SiHFBG30

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

1000

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= 10 V

5.0

RoHS*

• Fast Switching

Q_g(Max.) (nC)

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFBG30PbF

SiHFBG30-E3

IRFBG30

Lead (Pb)-free

SnPb

SiHFBG30

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

1000

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

3.1

Continuous Drain Current

V_GSat 10 V

I_D

2.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

280

3.1

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

125

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

1.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 55 mH, R_G= 25 Ω, I_AS= 3.1 A (see fig. 12).

c. I_SD≤ 3.1 A, dI/dt ≤ 80 A/µs, V_DD≤ 600, T_J≤ 150 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与SIHFBG30相关器件

型号	品牌	获取价格	描述	数据表
SIHFBG30-E3	KERSEMI	获取价格	Power MOSFET
SIHFBG30-E3	VISHAY	获取价格	Power MOSFET
SIHFD014	VISHAY	获取价格	Power MOSFET
SIHFD014-E3	VISHAY	获取价格	Power MOSFET
SIHFD020	VISHAY	获取价格	Power MOSFET
SIHFD020-E3	VISHAY	获取价格	Power MOSFET
SIHFD024	VISHAY	获取价格	Power MOSFET
SIHFD024-E3	VISHAY	获取价格	Power MOSFET
SIHFD110	VISHAY	获取价格	Power MOSFET
SIHFD110-E3	VISHAY	获取价格	Power MOSFET