Datasheet > SIHFD110

SIHFD110

更新时间： 2024-11-24 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	132K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHFD110 数据手册

IRFD110, SiHFD110

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

100

Available

• Repetitive Avalanche Rated

• For Automatic Insertion

_DS(on)(Ω)

V_GS= 10 V

0.54

RoHS*

Q_g(Max.) (nC)

8.3

2.3

COMPLIANT

• End Stackable

_gs(nC)

_gd(nC)

3.8

• 175 °C Operating Temperature

• Fast Switching and Ease of Paralleling

• Lead (Pb)-free Available

Configuration

Single

HEXDIP

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

N-Channel MOSFET

ORDERING INFORMATION

Package

HEXDIP

IRFD110PbF

SiHFD110-E3

IRFD110

Lead (Pb)-free

SnPb

SiHFD110

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

1.0

Continuous Drain Current

V_GSat 10 V

I_D

0.71

8.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.0083

140

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1.0

E_AR

0.13

Maximum Power Dissipation

_C= 25 °C

P_D

1.3

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 52 mH, R_G= 25 Ω, I_AS= 2.0 A (see fig. 12).

c. I_SD≤ 5.6 A, dI/dt ≤ 75 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91127

S-81263-Rev. A, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与SIHFD110相关器件

型号	品牌	获取价格	描述	数据表
SIHFD110-E3	VISHAY	获取价格	Power MOSFET
SIHFD113-E3	VISHAY	获取价格	TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, HVM
SIHFD123	VISHAY	获取价格	Power MOSFET
SIHFD123-E3	VISHAY	获取价格	Power MOSFET
SIHFD210	VISHAY	获取价格	Power MOSFET
SIHFD210-E3	VISHAY	获取价格	Power MOSFET
SIHFD214	VISHAY	获取价格	Power MOSFET
SIHFD214-E3	VISHAY	获取价格	Power MOSFET
SIHFD220	VISHAY	获取价格	Power MOSFET
SIHFD220-E3	VISHAY	获取价格	Power MOSFET