5秒后页面跳转
SIHFD110 PDF预览

SIHFD110

更新时间: 2024-10-15 06:11:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 132K
描述
Power MOSFET

SIHFD110 数据手册

 浏览型号SIHFD110的Datasheet PDF文件第2页浏览型号SIHFD110的Datasheet PDF文件第3页浏览型号SIHFD110的Datasheet PDF文件第4页浏览型号SIHFD110的Datasheet PDF文件第5页浏览型号SIHFD110的Datasheet PDF文件第6页浏览型号SIHFD110的Datasheet PDF文件第7页 
IRFD110, SiHFD110  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
• For Automatic Insertion  
R
DS(on) (Ω)  
VGS = 10 V  
0.54  
RoHS*  
Qg (Max.) (nC)  
8.3  
2.3  
COMPLIANT  
• End Stackable  
Q
Q
gs (nC)  
gd (nC)  
3.8  
• 175 °C Operating Temperature  
• Fast Switching and Ease of Paralleling  
• Lead (Pb)-free Available  
Configuration  
Single  
D
HEXDIP  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The 4 pin DIP package is a low cost machine-insertable case  
style which can be stacked in multiple combinations on  
standard 0.1" pin centers. The dual drain serves as a thermal  
link to the mounting surface for power dissipation levels up to  
1 W.  
G
S
G
D
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
HEXDIP  
IRFD110PbF  
SiHFD110-E3  
IRFD110  
Lead (Pb)-free  
SnPb  
SiHFD110  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
100  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
1.0  
Continuous Drain Current  
VGS at 10 V  
ID  
0.71  
8.0  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.0083  
140  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
1.0  
EAR  
0.13  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
1.3  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, RG = 25 Ω, IAS = 2.0 A (see fig. 12).  
c. ISD 5.6 A, dI/dt 75 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91127  
S-81263-Rev. A, 21-Jul-08  
www.vishay.com  
1

与SIHFD110相关器件

型号 品牌 获取价格 描述 数据表
SIHFD110-E3 VISHAY

获取价格

Power MOSFET
SIHFD113-E3 VISHAY

获取价格

TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, HVM
SIHFD123 VISHAY

获取价格

Power MOSFET
SIHFD123-E3 VISHAY

获取价格

Power MOSFET
SIHFD210 VISHAY

获取价格

Power MOSFET
SIHFD210-E3 VISHAY

获取价格

Power MOSFET
SIHFD214 VISHAY

获取价格

Power MOSFET
SIHFD214-E3 VISHAY

获取价格

Power MOSFET
SIHFD220 VISHAY

获取价格

Power MOSFET
SIHFD220-E3 VISHAY

获取价格

Power MOSFET