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SIHFD210 PDF预览

SIHFD210

更新时间: 2024-10-16 06:11:39
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威世 - VISHAY /
页数 文件大小 规格书
8页 1601K
描述
Power MOSFET

SIHFD210 数据手册

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IRFD210, SiHFD210  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
200  
Available  
• Repetitive Avalanche Rated  
• For Automatic Insertion  
• End Stackable  
R
DS(on) (Ω)  
VGS = 10 V  
1.5  
RoHS*  
Qg (Max.) (nC)  
8.2  
1.8  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Fast Switching  
4.5  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
HEXDIP  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
S
G
The 4 pin DIP package is a low cost machine-insertable case  
style which can be stacked in multiple combinations on  
standard 0.1" pin centers. The dual drain serves as a thermal  
link to the mounting surface for power dissipation levels up to  
1 W.  
S
N-Channel MOSFET  
D
ORDERING INFORMATION  
Package  
HEXDIP  
IRFD210PbF  
SiHFD210-E3  
IRFD210  
Lead (Pb)-free  
SnPb  
SiHFD210  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
200  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
0.60  
Continuous Drain Current  
VGS at 10 V  
ID  
0.38  
4.8  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.0083  
79  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
0.60  
EAR  
0.10  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
1.0  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 82 mH, RG = 25 Ω, IAS = 1.2 A (see fig. 12).  
c. ISD 3.3 A, dI/dt 70 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91129  
S-81263-Rev. A, 21-Jul-08  
www.vishay.com  
1

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