IRFDC20, SiHFDC20
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
600
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
Available
RDS(on) (Ω)
VGS = 10 V
4.4
RoHS*
Qg (Max.) (nC)
18
3.0
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Fast Switching
8.9
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
D
HEXDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
HEXDIP
IRFDC20PbF
SiHFDC20-E3
IRFDC20
Lead (Pb)-free
SnPb
SiHFDC20
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TC = 25 °C
TC =100°C
0.32
Continuous Drain Current
VGS at 10 V
ID
0.20
A
Pulsed Drain Currenta
IDM
2.6
Linear Derating Factor
0.0083
50
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
0.32
EAR
0.10
mJ
W
Maximum Power Dissipation
T
C = 25 °C
PD
1.0
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
3.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 54 mH, RG = 25 Ω, IAS = 1.3 A (see fig. 12).
c. ISD ≤ 4.4 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91142
S-Pending-Rev. A, 13-Jun-08
www.vishay.com
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