深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF110N060
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT
●应用:低压高频逆变电路 续流电流 保护电流
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS
■POLARITY PROTECTION APPLICATIONS
■FREE WHEELING
●最大额定值(TC=25°C)
●Absolute Maximum Ratings(Tc=25°C)
TO-220
单位
UNIT
参数
PARAMETER
符号
额定值
VDS=60V
RDS(ON)=8mΩ
ID=110A
SYMBOL VALUE
漏-源电压
Drain-source Voltage
VDS
VGS
60
V
V
栅-源电压
gate-source Voltage
±20
漏极电流
Continuous Drain Current
TC=25℃
ID
110*
A
①
①
耗散功率
Total Power Dissipation
Ptot
Tj
150*
150
W
°C
°C
最高结温
Junction Temperature
存储温度
Storage Temperature
TSTG
-55-175
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS
400
mJ
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
60
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
0.7
V/°C
25°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0
1
V
VDS =60V,
VGS =0V, Tj=25°C
µA
漏-源漏电流
Drain-source Leakage Current
IDSS
VDS =48V,
VGS =0V, Tj=125°C
10
µA
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF110N060 TO-220-TU
SIF110N060 TO-220-TU-HF
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Si semiconductors 2013.5