深圳深爱半导体股份有限公司
产品规格书
Shenzhen SI Semiconductors Co., LTD.
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF15N50F
●特点:热阻低
开关速度快
输入阻抗高
符合RoHS规范
●FEATURES:ꢀLOW THERMAL RESISTANCE ꢀFAST SWITCHING ꢀHIGH INPUT RESISTANCE
■RoHS COMPLIANT
●应用:电子镇流器
电子变压器
开关电源
ꢁAPPLICATION: ꢀELECTRONIC BALLAST ꢀELECTRONIC TRANSFORMER ꢀSWITCH MODE POWER SUPPLY
●最大额定值(TC=25C)
●Absolute Maximum Ratings(Tc=25C)
TO-220/220FP(L)/262/263
参数
PARAMETER
ꢂ-ꢃꢄꢅ
符号
SYMBOL
额定值
VALUE
单位
UNIT
VDS=500V
RDS(ON)=0.34Ω
ID=15A
VDS
VGS
500
V
V
Drain-source Voltage
ꢆ-ꢃꢄꢅ
±30
gate-source Voltage
ꢂꢇꢄꢈ
Continuous Drain Current
TC=25ꢉ
ꢂꢇꢄꢈ
ID
15
A
Continuous Drain Current
TC=100ꢉ
ꢊꢋꢌꢍꢄꢈ
ID
11
60
A
A
IDM
Drain Current ꢎPulsed
①
TO-220:225
TO-220FP(L):51
TO-262/263:156
ꢏꢐꢑꢒ
Power Dissipation
W
Ptot
ꢊꢓꢔꢕ
Junction Temperature
ꢖꢗꢕꢘ
Storage Temperature
ꢙꢌꢍꢚꢛꢜꢝ
Tj
150
-55-150
1100
C
C
TSTG
EAS
mJ
Single Pulse Avalanche Energy
●电特性(Tc=25C)
●Electronic Characteristics(Tc=25C)
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
ꢂ-ꢃꢞꢟꢄꢅ
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250A
500
V
ꢞꢟꢄꢅꢕꢘꢠꢡ
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
0.65
V/C
25C
ꢆꢇꢢꢣꢄꢅ
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250A
2.0
4.0
1
V
A
A
S
VDS =500V,
VGS =0V, Tj=25C
VDS =400V,
VGS =0V, Tj=125C
VDS =15V, ID=7.5A
③
ꢂ-ꢃꢂꢄꢈ
Drain-source Leakage Current
IDSS
10
ꢤꢥ
Forward Transconductance
gfs
11
●订单信息/ORDERING INFORMATION:
订货编码/ORDERING CODE
包装形式/PACKING
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
SIF15N50F TO-220-TU-HF
TO-220 条管ꢦ/TUBE PACKING
SIF15N50F TO-220-TU
TO-220FP(L) 条管ꢦ/TUBE PACKING
SIF15N50F TO-220FP(L)-TU
SIF15N50F TO-220FP(L)-TU-HF
SIF15N50F TO-262-TU ꢧ
SIF15N50F TO-263-TU
SIF15N50F TO-263-TR
SIF15N50F TO-262-TU-HF ꢧ
SIF15N50FTO-263-TU-HF
SIF15N50F TO-263-TR-HF
TO-262 ꢧ 263 条管ꢦ/TUBE PACKING
TO-263 编带ꢦ/TAPE & REEL PACKING
Si semiconductors 2018.8 本版为深爱试用版本,仅供参考使用,我司保留修改权利
1