深圳深爱半导体股份有限公司
产品规格书
Shenzhen SI Semiconductors Co., LTD.
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF160N100
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关应用
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS
■SWITCH APPLICATIONS
■SYNCHRONOUS RECTIFICATION
●最大额定值(TC=25C)
●Absolute Maximum Ratings(Tc=25C)
TO-220/220FP/262/263
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
VDS=100V
漏-源电压
Drain-source Voltage
VDS
VGS
100
V
V
RDS(ON)=3.5mΩ
ID=160A
栅-源电压
gate-source Voltage
±20
漏极电流
Continuous Drain Current
TC=25℃
ID
160*
A
①
①
TO-220/262/263
: 220
耗散功率
Total Power Dissipation
Ptot
W
TO-220FP:60
最高结温
Junction Temperature
Tj
150
C
C
存储温度
Storage Temperature
TSTG
-55-175
1400
单脉冲雪崩能量
Single Pulse Avalanche Energy
②
EAS
mJ
●电特性(Tc=25C)
●Electronic Characteristics(Tc=25C)
参数
PARAMETER
符号
SYMBOL
测试条件
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
TEST CONDITION
VGS=0V, ID=250A
VGS=VDS, ID=250A③
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS(TH)
IDSS
100
2.0
113
3.0
V
V
栅极开启电压
Gate Threshold Voltage
4.0
1
漏-源漏电流
Drain-source Leakage Current
VDS =100V,VGS =0V
A
Tc=25℃
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
漏-源导通电阻
Static Drain-source On
Resistance
IGSS
VGS =±20V
±100
4.5
nA
RDS(ON)
VGS =10V, ID=50A③
VDS =30V, ID=20A③
3.5
mΩ
S
跨导
Forward Transconductance
gFS
15
●订单信息/ORDERING INFORMATION:
订货编码/ORDERING CODE
包装形式/PACKING
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-220/220FP/262/263
条管装/TUBE PACKING
SIF160N100
TO-220/220FP/262/263-TU
SIF160N100
TO-220/220FP/262/263-TU-HF
TO-263 编带装/TAPE & REEL PACKING
SIF160N100 TO-263-TR
SIF160N100 TO-263-TR-HF
1
Si semiconductors 2016.3