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SID05N10 PDF预览

SID05N10

更新时间: 2024-02-16 13:18:55
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 2193K
描述
5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET

SID05N10 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.71Base Number Matches:1

SID05N10 数据手册

 浏览型号SID05N10的Datasheet PDF文件第2页浏览型号SID05N10的Datasheet PDF文件第3页浏览型号SID05N10的Datasheet PDF文件第4页 
SID05N10  
5A , 100V , RDS(ON) 170 m  
N-Channel Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen-free  
TO-251  
DESCRIPTION  
The SID05N10 provide the designer with the best  
combination of fast switching, The TO-251 package is  
universally preferred for all commercial-industrial surface  
mount applications. The device is suited for charger,  
industrial and consumer environment.  
A
B
FEATURES  
C
D
Low On-resistance  
Fast Switching Speed  
Low-voltage drive (4V)  
Wide SOA (safe operating area)  
Easily designed drive circuits  
Easy to parallel  
G E  
K
H
F
2
Drain  
M
J
P
MARKING:  
1
Gate  
Millimeter  
Millimeter  
05N10  
ꢁꢁꢁꢁ  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
2.40  
0.55  
7.20  
7.80  
Min.  
5.40  
0.90  
Max.  
5.80  
1.50  
Date code  
A
B
C
D
E
F
6.40  
5.20  
2.20  
0.45  
6.80  
7.20  
G
H
J
K
M
P
2.30  
0.60  
0.50  
0.45  
0.90  
0.70  
0.60  
3
Source  
ABSOLUTE MAXIMUM RATINGS  
Unit  
V
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Ratings  
100  
Gate-Source Voltage  
VGS  
±20  
V
TC=25°C  
5
A
Continuous Drain Current  
Pulsed Drain Current1  
ID  
TC=100°C  
3.75  
20  
A
IDM  
PD  
A
Total Power Dissipation @ TC = 25°C  
20  
W
Thermal Resistance Junction-case  
RθJC  
RθJA  
6.25  
110  
°C / W  
°C / W  
W / °C  
°C  
Thermal Resistance Junction-ambient  
Linear Derating Factor  
0.16  
-55~150  
Operating Junction & Storage temperature  
TJ, TSTG  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Dec-2011 Rev. A  
Page 1 of 4  

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