SID05N10
5A , 100V , RDS(ON) 170 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
TO-251
DESCRIPTION
The SID05N10 provide the designer with the best
combination of fast switching, The TO-251 package is
universally preferred for all commercial-industrial surface
mount applications. The device is suited for charger,
industrial and consumer environment.
A
B
FEATURES
C
D
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Low On-resistance
Fast Switching Speed
Low-voltage drive (4V)
Wide SOA (safe operating area)
Easily designed drive circuits
Easy to parallel
G E
K
H
F
2
Drain
M
J
P
MARKING:
1
Gate
Millimeter
Millimeter
05N10
ꢁꢁꢁꢁ
REF.
REF.
Min.
Max.
6.80
5.50
2.40
0.55
7.20
7.80
Min.
5.40
0.90
Max.
5.80
1.50
Date code
A
B
C
D
E
F
6.40
5.20
2.20
0.45
6.80
7.20
G
H
J
K
M
P
2.30
0.60
0.50
0.45
0.90
0.70
0.60
3
Source
ABSOLUTE MAXIMUM RATINGS
Unit
V
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
100
Gate-Source Voltage
VGS
±20
V
TC=25°C
5
A
Continuous Drain Current
Pulsed Drain Current1
ID
TC=100°C
3.75
20
A
IDM
PD
A
Total Power Dissipation @ TC = 25°C
20
W
Thermal Resistance Junction-case
RθJC
RθJA
6.25
110
°C / W
°C / W
W / °C
°C
Thermal Resistance Junction-ambient
Linear Derating Factor
0.16
-55~150
Operating Junction & Storage temperature
TJ, TSTG
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Dec-2011 Rev. A
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