Datasheet > SID05N10

SID05N10

更新时间： 2024-11-05 09:25:39

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SECOS		/
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描述
5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET

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SID05N10 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

SID05N10 数据手册

SID05N10

5A , 100V , R_DS(ON)170 mΩ

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen-free

TO-251

DESCRIPTION

The SID05N10 provide the designer with the best

combination of fast switching, The TO-251 package is

universally preferred for all commercial-industrial surface

mount applications. The device is suited for charger,

industrial and consumer environment.

FEATURES

ꢀ

Low On-resistance

Fast Switching Speed

Low-voltage drive (4V)

Wide SOA (safe operating area)

Easily designed drive circuits

Easy to parallel

G E

Drain

MARKING:

Gate

Millimeter

05N10

ꢁꢁꢁꢁ

REF.

Min.

Max.

6.80

5.50

2.40

0.55

7.20

7.80

Min.

5.40

0.90

Max.

5.80

1.50

Date code

6.40

5.20

2.20

0.45

6.80

7.20

2.30

0.60

0.50

0.45

0.90

0.70

0.60

Source

ABSOLUTE MAXIMUM RATINGS

Unit

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

100

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain Current

Pulsed Drain Current¹

I_D

T_C=100°C

3.75

I_DM

P_D

Total Power Dissipation @ T_C= 25°C

Thermal Resistance Junction-case

R_θJC

R_θJA

6.25

110

°C / W

W / °C

°C

Thermal Resistance Junction-ambient

Linear Derating Factor

0.16

-55~150

Operating Junction & Storage temperature

T_J, T_STG

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Dec-2011 Rev. A

Page 1 of 4

12 3 4

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