Datasheet > SID10N30_15

SID10N30_15

更新时间： 2024-11-06 01:16:07

品牌	Logo	应用领域
SECOS		/
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4页	623K
描述
N-Channel Enhancement MOSFET

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SID10N30_15 数据手册

SID10N30-600I

5.8A, 300V, R_DS(ON)600 m

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-251P

DESCRIPTION

The miniature surface mount MOSFETs utilize a high

cell density trench process to provide Low R_DS(on)and

to ensure minimal power loss and heat dissipation.

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low thermal impedance copper leadframe

DPAK saves board space



Fast switching speed.

High performance trench technology.

G E

APPLICATION

DC-DC converters, power management in portable and

battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Millimeter

REF.

Min.

6.40

5.20

2.20

0.40

6.80

Max.

6.80

5.50

2.40

0.60

7.20

Min.

Max.

6.30

1.50

6.00

0.90

2.30

0.60

0.70

0.40

0.90

1.20

0.60

4.00

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

300

±20

5.8

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

Continuous Drain Current ¹

Pulsed Drain Current ²

T_C=25°C

I_D

I_DM

Continuous Source Current (Diode Conduction) ¹

I_S

Power Dissipation ¹

T_C=25°C

P_D

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 175

Thermal Resistance Data

Maximum Junction to Ambient ¹

Maximum Junction to Case

R_θJA

R_θJC

62.5

3.75

°C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

04-Dec-2012 Rev. B

Page 1 of 4

12 3 4

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