Datasheet > SID15N10_15

SID15N10_15

更新时间： 2022-02-26 12:42:08

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SECOS		/
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描述
N-Ch Enhancement Mode Power MOSFET

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SID15N10_15 数据手册

SID15N10

15A, 100V, R_DS(ON)110mΩ

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-251

DESCRIPTION

The SID15N10 provide the designer with the best

combination of fast switching. The TO-251 package is

universally preferred for all commercial-industrial

surface mount applications. The device is suited for

charger, industrial and consumer environment.

FEATURES

ꢁ

R_DS(on)≦ 100mΩ @ V_GS= 10V

Super high density cell design for extremely low R_DS(on)

Exceptional on-resistance and maximum DC current

capability

G E

MARKING

Millimeter

15N10

REF.

Min.

Max.

6.80

5.50

2.40

0.55

7.20

7.80

Min.

5.40

0.90

Max.

5.80

1.50

Date Code

ꢀꢀꢀꢀ

6.40

5.20

2.20

0.45

6.80

7.20

2.30

0.60

0.50

0.45

0.90

0.70

0.60

PACKAGE INFORMATION

Package

MPQ

Leader Size

Drain

TO-251

2.5K

13’ inch

Gate

Source

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

100

V_GS

±20

T_C=25°C

T_C=70°C

Continuous Drain Current

Pulsed Drain Current ¹

Power Dissipation

I_D

I_DM

13.8

T_C=25°C

T_A=25°C

34.7

°C

P_D

Operating Junction and Storage Temperature Range

T_J, T_STG

-55 ~ 150

Thermal Resistance Ratings

Maximum Thermal Resistance Junction-Ambient (PCB

R_θJA

R_θJC

62.5

3.6

°C / W

mount) ³

Maximum Thermal Resistance Junction-Case³

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

22-Apr-2013 Rev. A

Page 1 of 4

12 3 4

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