是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.81 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9407DY-E3 | VISHAY |
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Transistor | |
SI9407DY-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o | |
SI9410BDY | VISHAY |
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N-Channel 30-V (D-S) MOSFET | |
SI9410BDY_05 | VISHAY |
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N-Channel 30-V (D-S) MOSFET | |
SI9410BDY-T1 | VISHAY |
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N-Channel 30-V (D-S) MOSFET | |
SI9410BDY-T1-E3 | VISHAY |
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TRANSISTOR 6200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET | |
SI9410DY | FAIRCHILD |
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Single N-Channel Enhancement Mode MOSFET | |
SI9410DY | VISHAY |
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N-Channel 30-V (D-S) MOSFET | |
SI9410DY | TYSEMI |
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VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V) | |
SI9410DY | NXP |
获取价格 |
N-channel enhancement mode field-effect transistor |