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SI9410DY PDF预览

SI9410DY

更新时间: 2024-11-15 12:32:23
品牌 Logo 应用领域
TYSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 385K
描述
VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)

SI9410DY 数据手册

 浏览型号SI9410DY的Datasheet PDF文件第2页 
MMOOSSFFEETT  
                                                  
                                                   
II  
                                                   
CC  
                                                    
I
C
Product specification  
SI9410DY  
SOP-8  
Features  
VDS (V) = 30V  
ID = 7 A (VGS = 10V)  
RDS(ON) 0.03 Ω (VGS = 10V)  
RDS(ON) 0.04 Ω (VGS = 5V)  
RDS(ON) 0.05 Ω (VGS = 4.5V)  
D
D D D  
N/C  
S
D
1
2
3
4
8
7
6
5
D
D
D
G
S
G
S
S
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Limit  
30  
Symbol  
Unit  
V
VDS  
VGS  
Gate-Source Voltage  
±20  
7.0  
5.8  
30  
TA = 25  
TA = 70℃  
ID  
A
Continuous Drain Current (TJ = 150 )*  
Pulsed Drain Current  
IDM  
IS  
A
A
2.8  
2.5  
1.6  
Continuous Source Current(Diode Conduction) *  
Maximum Power Dissipation *  
TA = 25℃  
TA = 70℃  
PD  
W
Operating Junction and Storage Temperature Range  
-55 to 150  
50  
TJ, Tstg  
RthJA  
Maximum Junction-to-Ambient*  
t 10 sec  
/W  
* Surface Mounted on 1x 1FR4 Board.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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