Datasheet > Si4101DY

Si4101DY

更新时间： 2024-11-12 14:53:35

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威世 - VISHAY		/
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描述
P-Channel 30 V (D-S) MOSFET

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New Product

Si4101DY

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Material categorization:

PRODUCT SUMMARY

•

_D(A)^d

V_DS(V)

R_DS(on)() Max.

Q_g(Typ.)

0.0060 at V_GS= - 10 V

0.0080 at V_GS= - 4.5 V

- 25.7

- 22.3

- 30

65 nC

For definitions of compliance please see

www.vishay.com/doc?99912

SO-8

APPLICATIONS

• Adaptor Switch, Load Switch

•

Power Management

Notebook Computers and

Portable Battery Packs

Top View

Ordering Information:

Si4101DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

- 25.7

- 20.6

- 18^{a, b}

- 14.4^{a, b}

- 70

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

- 5

- 2.4^{a, b}

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

- 30

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

_C= 70 °C

_A= 25 °C

3.8

P_D

Maximum Power Dissipation

2.9^{a, b}

1.9^{a, b}

- 55 to 150

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c}

t 10 s

Steady State

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 84 °C/W.

d. Based on T_C= 25 °C.

Document Number: 62828

S13-0110-Rev. A, 21-Jan-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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